Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...

Double-gate nanowire field effect transistor for a biosensor.

A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broa...

Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...